Thanks in advance for your time. Skip to content. Search for books, journals or webpages All Pages Books Journals. View on ScienceDirect. Editors: Norman G. Einspruch Dale M.
Imprint: Academic Press. Published Date: 7th June Page Count: Flexible - Read on multiple operating systems and devices. Easily read eBooks on smart phones, computers, or any eBook readers, including Kindle. When you read an eBook on VitalSource Bookshelf, enjoy such features as: Access online or offline, on mobile or desktop devices Bookmarks, highlights and notes sync across all your devices Smart study tools such as note sharing and subscription, review mode, and Microsoft OneNote integration Search and navigate content across your entire Bookshelf library Interactive notebook and read-aloud functionality Look up additional information online by highlighting a word or phrase.
Institutional Subscription. Free Shipping Free global shipping No minimum order. Introduction II. Early Developments III. Contact Metallization III.
- 100 Perfect Hair Days: Step-by-Steps for Pretty Waves, Braids, Curls, Buns, and More!.
- Fighting Corruption in Transition Economies: Armenia.
- Material Information?
- Plasma etching.
- Architecture and Patterns for IT Service Management, Resource Planning, and Governance. Making Shoes for the Cobblers Children!
- Hypertension in the Elderly: Pocketbook.
- Sputter etching.
Diffusion Barriers IV. Schottky Diode Metallization V. Cosputtered Aluminum Alloys VI. Dielectrics IX. Die Attach X.
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
Thus the damage will not be greatly exacerbated as the oxide thickness is further reduced in the future. Although annealing in forming gas can passivate the traps generated during plasma etching, subsequent Fowler - Nordheim stressing causes more traps to be generated in these devices than in devices that have not been through plasma etching. The protection diode should be forward biased during processing to safely protect the gate oxide.
In CMOS circuits, the drains of the driver circuit can generally act as adequate protection diodes for the oxide regardless of N or P substrate and the polarity of the plasma charging current. The plasma stress current can be reduced by reducing the ion density, which is unfortunately linked to the etch rate or directionality, or by reducing the electron temperature.
Maintaining a very uniform plasma over the surface of the wafer, reducing the plasma charging current during the over-etch time and judicious use of protection diode and antenna design rules will reduce plasma damage to an acceptable level for ULSI production even for very thin gate oxides.
- Dry Etching of Copper Using Chlorine: A Review?
- Wrestling with Moses: How Jane Jacobs Took On New Yorks Master Builder and Transformed the American City.
- Thin gate oxide damage due to plasma processing - IOPscience?
- The rise and fall of neoliberalism : the collapse of an economic order?;
- Forts of the United States: An Historical Dictionary, 16th Through 19th Centuries?
- Dry Etching of Copper Using Chlorine: A Review.
Hampden-Smith, M. Blinov, G. Filatov, I. Danilin, B. Slovetskii, D.
Tablitsy fizicheskikh velichin. Orlikovsky, A. Svettsov, V. Efremov, A. Winters, H. Hu, C.