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Thanks in advance for your time. Skip to content. Search for books, journals or webpages All Pages Books Journals. View on ScienceDirect. Editors: Norman G. Einspruch Dale M.

Ion etching

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Institutional Subscription. Free Shipping Free global shipping No minimum order. Introduction II. Early Developments III. Contact Metallization III.


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Diffusion Barriers IV. Schottky Diode Metallization V. Cosputtered Aluminum Alloys VI. Dielectrics IX. Die Attach X.

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Thus the damage will not be greatly exacerbated as the oxide thickness is further reduced in the future. Although annealing in forming gas can passivate the traps generated during plasma etching, subsequent Fowler - Nordheim stressing causes more traps to be generated in these devices than in devices that have not been through plasma etching. The protection diode should be forward biased during processing to safely protect the gate oxide.

Material Information

In CMOS circuits, the drains of the driver circuit can generally act as adequate protection diodes for the oxide regardless of N or P substrate and the polarity of the plasma charging current. The plasma stress current can be reduced by reducing the ion density, which is unfortunately linked to the etch rate or directionality, or by reducing the electron temperature.

Plasma Processing

Maintaining a very uniform plasma over the surface of the wafer, reducing the plasma charging current during the over-etch time and judicious use of protection diode and antenna design rules will reduce plasma damage to an acceptable level for ULSI production even for very thin gate oxides.

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Tablitsy fizicheskikh velichin. Orlikovsky, A. Svettsov, V. Efremov, A. Winters, H. Hu, C.